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更多>>苹果手机iPhone14和iPhone14Max销量下滑SG-8018CE爱普生有源晶振X1G005591006700
来源:http://www.zhaoxiandz.com 作者:zhaoxiandz 2022年10月13
苹果手机iPhone14和iPhone14Max销量下滑SG-8018CE爱普生有源晶振X1G005591006700
另一方面,当前全球经济增长速度放缓,消费者换机欲望走低,消费观念开始趋向理性,使第三财季苹果在大中华地区罕见出现1%的降幅.因此,基于iPhone13系列过于畅销,以及换机周期拉长,iPhone14销量下滑可能会是大概率事件.然而两款Pro机型升级到了A16芯片.爱普生晶振这使iPhone能够提供更出色的续航并反应极为灵敏.同时iPhone14Pro系列带来了全系多了直观方式与iPhone进行交互,彻底模糊硬件和软件之间的界限,这被称作灵动岛的概念.通过精细打造的动画和过渡,清楚的向用户传达信息.在性能配置上往年苹果通常会在主要手机版本中引入新的自研A芯片.爱普生石英晶体振荡器,X1G005591020600晶振
SG-8018CE爱普生有源晶振X1G005591006700,苹果手机iPhone14和iPhone14Max晶振
不过14和14Max保留与iPhone13相同的A15仿生芯片,也成为其最大的槽点.苹果手机iPhone14和iPhone14Max销量下滑iPhone14创新乏善可陈目前市场销售来看iPhone14没有诚意的挤牙膏升级,已经遭到反噬.实际上早有人评论iPhone14就是换壳的iPhone13.智能手机晶振当然即使iPhone14Pro和Pro Max所配置的全新A16芯片,也被人吐槽迭代升级太小,甚至被认为是A15的制程升级版.但全新A16芯片受制于物理限制,效率提升不大也算是正常,但仍然对其他竞争厂商形成了降维打击.爱普生石英晶体振荡器,X1G005591020600晶振
SG-8018CE爱普生有源晶振X1G005591006700,苹果手机iPhone14和iPhone14Max晶振
另一方面,当前全球经济增长速度放缓,消费者换机欲望走低,消费观念开始趋向理性,使第三财季苹果在大中华地区罕见出现1%的降幅.因此,基于iPhone13系列过于畅销,以及换机周期拉长,iPhone14销量下滑可能会是大概率事件.然而两款Pro机型升级到了A16芯片.爱普生晶振这使iPhone能够提供更出色的续航并反应极为灵敏.同时iPhone14Pro系列带来了全系多了直观方式与iPhone进行交互,彻底模糊硬件和软件之间的界限,这被称作灵动岛的概念.通过精细打造的动画和过渡,清楚的向用户传达信息.在性能配置上往年苹果通常会在主要手机版本中引入新的自研A芯片.爱普生石英晶体振荡器,X1G005591020600晶振
SG-8018CE爱普生有源晶振X1G005591006700,苹果手机iPhone14和iPhone14Max晶振
爱普生有源晶振编码 | 型号 | 频率 | 长X宽X高 | 输出波 | 电源电压 | 工作温度 | 频差 |
X1G005591005900 | SG-8018CE | 11.289600 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006000 | SG-8018CE | 23.040000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006100 | SG-8018CE | 28.636360 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006200 | SG-8018CE | 14.430000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006300 | SG-8018CE | 8.439025 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006400 | SG-8018CE | 29.491200 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006500 | SG-8018CE | 22.222200 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591031100 | SG-8018CE | 30.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006600 | SG-8018CE | 19.660800 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006700 | SG-8018CE | 6.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006800 | SG-8018CE | 7.680000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591006900 | SG-8018CE | 74.250000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007000 | SG-8018CE | 88.888000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007100 | SG-8018CE | 88.888000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007200 | SG-8018CE | 12.500000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007300 | SG-8018CE | 148.500000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007400 | SG-8018CE | 74.250000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007500 | SG-8018CE | 57.272720 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007600 | SG-8018CE | 37.125000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007700 | SG-8018CE | 19.200000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007800 | SG-8018CE | 6.005284 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591007900 | SG-8018CE | 57.209760 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008000 | SG-8018CE | 10.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008100 | SG-8018CE | 133.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008200 | SG-8018CE | 32.400000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008300 | SG-8018CE | 22.579200 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008400 | SG-8018CE | 44.236800 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008500 | SG-8018CE | 1.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008600 | SG-8018CE | 4.915200 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008700 | SG-8018CE | 1.843200 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591008800 | SG-8018CE | 33.333000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
SG-8018CE爱普生有源晶振X1G005591006700,苹果手机iPhone14和iPhone14Max晶振
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